AON7804 30v dual n-channel mosfet general description product summary v ds i d (at v gs =10v) 22a r ds(on) (at v gs =10v) < 21m ? r ds(on) (at v gs = 4.5v) < 26m ? 100% uis tested 100% r g tested esd protected symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r jc maximum junction-to-case c/w c/w maximum junction-to-ambient a d 6.2 75 7.5 power dissipation b p d w power dissipation a p dsm w t a =70c 17 2 t a =25c a t a =25c i dsm a t a =70c i d 22 14 t c =25c t c =100c avalanche energy l=0.1mh c mj avalanche current c 7 continuous drain current 18 9 a 19 the AON7804 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. it includes two low r ds (on) mosfets in a dual dfn3x3 package. the AON7804 is well suited for use in compact dc/dc converter applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v v 20 gate-source voltage drain-source voltage 30 units maximum junction-to-ambient a c/w r ja 30 60 40 junction and storage temperature range -55 to 150 c thermal characteristics 48 pulsed drain current c continuous drain current parameter typ max t c =25c 3.1 7 t c =100c pin 1 dfn 3x3a_dual top view bottom view top view pin 1 s2 d2 g2 g1 d1 s1 d2 d1 g d s g d s rev 0: nov 2010 www.aosmd.com page 1 of 6
AON7804 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 ? ? q g (10v) 12 15 18 nc q g (4.5v) 6 7.5 9 nc q gs 2.5 nc q gd 3nc t d(on) 5ns t r 3.5 ns t d(off) 19 ns t f 3.5 ns t rr 6 810ns q rr 14 18 22 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8a reverse transfer capacitance i f =8a, di/dt=500a/ s v gs =0v, v ds =15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a v ds =v gs i d =250 a v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage r ds(on) static drain-source on-resistance m ? i s =1a,v gs =0v v ds =5v, i d =9a v gs =4.5v, i d =7a v gs =10v, v ds =15v, r l =1.7 ? , r gen =3 ? gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =8a, di/dt=500a/ s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime a . the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the power dissipation p dsm is based on r ja t 10s value and the maximum allowed junction temperature of 150c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. d. the r ja is the sum of the thermal impedence from junction to case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsi nk, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. rev 0: nov 2010 www.aosmd.com page 2 of 6
AON7804 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 0 5 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =4.5v i d =7a v gs =10v i d =8a 10 15 20 25 30 35 40 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m ? ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8a 25c 125c 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 3v 4v 5v 10v rev 0: nov 2010 www.aosmd.com page 3 of 6
AON7804 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0 2 4 6 8 10 03691215 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z jc normalized transient thermal resistance c oss c rss v ds =15v i d =8a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t c =25c 10 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 jc =7.5c/w rev 0: nov 2010 www.aosmd.com page 4 of 6
AON7804 typical electrical and thermal characteristic s 17 5 2 10 0 18 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note h) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 4 8 12 16 20 0 25 50 75 100 125 150 t case (c) figure 13: power de-rating (note f) power dissipation (w) 0 5 10 15 20 25 0 25 50 75 100 125 150 t case (c) figure 14: current de-rating (note f) current rating i d (a) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) power (w) t a =25c r ja =75c/w 1 10 100 1 10 100 1000 time in avalanche, t a ( s) figure 12: single pulse avalanche capability (note c) i ar (a) peak avalanche current t a =25c t a =150c t a =100c t a =125c rev 0: nov 2010 www.aosmd.com page 5 of 6
AON7804 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: nov 2010 www.aosmd.com page 6 of 6
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